Abstracts

Two days, 4 themes, over 30 inspiring presentations

Presentation at Power Electronics International 2026 are grouped into 4 key themes which collectively provide complete coverage of the global power electronics industry.

If you are interested in speaking at Power Electronics International 2026, please contact [email protected] or call +44 (0)24 7671 8970.

2026 Speakers Include

Advantest
Allegro MicroSystems
Arrow Electronics
Cambridge GaN Devices
CISSOID
DIAMFAB
Ferric
Fox-Tech
GlobalFoundries
Hitachi Energy
IDTechEx
Infineon
Navitas
onsemi
PiNK GmbH Thermosysteme
QPT
Renesas
ROHM Semiconductor Europe
STMicroelectronics
Texas Instruments
Vicor
Wired & Wireless Technologies (WAWT)
Yole Group

2026 Presentation Abstracts

Putting the Automotive Industry in Pole Position
Panel Session

Voice of the Vehicle: What's needed from the Power Electronics Supply Chain

OEM and Tier 1 leaders expose reliability, efficiency and ultra fast charging hurdles and outline the SiC, GaN, packaging and cooling advances they need from power semiconductor suppliers.

PARTICIPANT
Dr. Stefan Hain
onsemi

Accelerating the Development of Next-Generation Silicon Carbide (SiC) Traction Inverters for Electric Mobility Applications

Presented by Pierre Delatte, CTO, CISSOID

Awaiting presentation abstract.

EV Inverter Drives above 100 kW Are Expected to Transition to GaN. Where Does the Roadmap End?

Presented by Daniel Murphy, Senior Director Product Management, Cambridge GaN Devices

Gallium Nitride (GaN) is transforming power electronics through superior efficiency and power density. While established in low- and mid-power systems, its transition to higher power classes has been limited by challenges in reliability, paralleling, and gate robustness. This presentation highlights how recent advances in device design, gate control, and packaging are enabling GaN’s expansion into automotive and industrial applications. Enhanced robustness improved thermal performance, and simplified system integration now allow consistent behaviour at higher voltages and currents. These innovations address key reliability concerns, making GaN a practical option for high-power converters, and motor drives. Attendees will gain insights into design considerations and implementation strategies supporting GaN’s evolution beyond traditional limits. Together, these developments demonstrate that GaN technology now offers the scalability, durability, and ease of use required for next-generation high-power applications.

Next Generation of Power Electronic Systems: Driving Efficiency through System Optimization

Presented by Dr. Stefan Hain, Senior Director, onsemi

As the world moves towards global electrification, semiconductor innovation is indispensable. With an innovation cycle of 2-3 years, new WBG power semiconductor performance is increasingly limited by the physics of the package and the systems – here innovative new system solutions need to be considered to exploit the full potential of the new semiconductor technologies. This presentation will show a detailed analysis how improvements on chip level affects typical power electronic systems and what benefits could be achieved if a holistic system optimization is considered.

Presentation by Arrow Electronics

Presented by Philipp Mai, Vice President Engineering, EMEA, Arrow Electronics

Awaiting presentation abstract.

Presentation by GlobalFoundries

Presented by Téa Williams, Senior Vice President, Power Product Line, GlobalFoundries

Awaiting presentation abstract.

Presentation by PiNK GmbH Thermosysteme

Presented by Name to be advised, PiNK GmbH Thermosysteme

Awaiting presentation abstract.

Presentation by Texas Instruments

Presented by Donovan Porter, Sector General Manager, Texas Instruments

As 48V battery electric vehicles (BEV) are introduced to the market, many global carmakers are considering the transition from 12V to 48V within their automotive systems. Previously, 48V was only used to improve efficiency in mild hybrid vehicles, so there are challenges to implementing a 48V low-voltage architecture in BEV, hybrid electric vehicles (HEV) and plug-in hybrid electric vehicles (PHEV) generating 48V from a high-voltage battery. This presentation will outline 48V architectures and potential design solutions for 48V in future electric vehicles.

Zonal Architectures and 48V Board Networks Are Transforming Automotive Design: What This Means for Power Semiconductors

Presented by Christoph Stangl, Product Marketing Manager, Motor Drivers, Allegro MicroSystems

The automotive industry is undergoing a profound transformation, driven by the adoption of zonal architectures and 48V electrical systems. This shift is critical as modern vehicles, particularly EVs and hybrids, demand unprecedented electrical power for ADAS, infotainment and thermal management. Traditional distributed E/E architectures, with their complex wiring and numerous ECUs, are being replaced by zonal designs. These partition the vehicle into distinct regions, each managed by central controllers to significantly reduce design complexity while cutting costs and enhancing scalability. Concurrently, the move from 12V to 48V systems addresses escalating power needs, enabling features like hybrid powertrains and efficient thermal management. The convergence of zonal designs and 48V systems creates a synergistic effect by optimizing power distribution. This leads to lighter, more efficient vehicles with improved range and establishes future-proof platforms for OTA updates. While implementation presents early challenges related to development costs and supply chain realignment, companies that embrace these changes will gain a significant competitive edge. This evolution represents more than a passing trend, it is reshaping industry standards and redefining EV design to yield smarter, more modular and more efficient next-generation vehicles. In this session, Allegro will share its perspective on the convergence of zonal architectures and 48V electrical systems and what this industry inflection points means for the future of automotive power semiconductor design.

 
Ensuring a Renewable, Sustainable Future

Diamond Power Electronics: Beyond Ultra-high Voltage

Presented by Ivan Llaurado, Chief Revenue Officer (CRO) & Partnership Development Director, DIAMFAB

Awaiting presentation abstract.

Power Semiconductors for the Future Power Grid

Presented by Tobias Keller, VP Head of global Product Management, Portfolio & Marketing Semiconductors, Hitachi Energy

Awaiting presentation abstract.

 
Delivering AI-driven Data Centre Densification

An Innovative AI-Enhanced Control Strategy for Soft-Switching High-Power Converters

Presented by Fabrizio Di Franco, Technical Marketing Manager of Power and Energy System Solutions, STMicroelectronics

The accelerating adoption of digital power converters plays a pivotal role in the global decarbonization effort by enabling higher energy efficiency in a wide range of applications. While advancements power semiconductors have significantly improved converter performance, control strategies remain a critical aspect in maximizing overall system efficiency, robustness and reliability. Traditional control methods, such as fixed-parameter PID (proportional-integral-derivative) controllers or model-based approaches, have evolved in complexity, yet a transformative leap is anticipated through the integration of Artificial Intelligence (AI) models. This presentation explores an innovative AI-enhanced control strategy specifically tailored for soft-switching high-power converters, which are inherently nonlinear systems. Leveraging AI’s capability to handle nonlinearities and adapt dynamically, the proposed approach optimizes converter control by incorporating additional real-time parameters such as temperature variations, component aging effects, and partial malfunctions or fault. This adaptability ensures high efficiency and robust performance under diverse operating conditions, surpassing the limitations of conventional fixed-parameter controls. The implementation of this approach exploits recent advancements in high-performance microcontrollers and control processors with embedded AI accelerators, enabling real-time processing of large datasets generated from converter operation. By harnessing these technologies, the AI-based control strategy not only enhances energy efficiency but also extends the operational lifespan and reliability of power converters. This work presents the conceptual framework, key algorithm developments, and preliminary validation results demonstrating the significant benefits of AI integration in soft-switching power converters. The findings highlight the potential of AI-driven control to become a cornerstone technology in next-generation power electronics, supporting the transition to sustainable and resilient energy systems worldwide.

Best Practices for Using Modular Power to Achieve Efficient, Scalable and Cost-effective PDNs for AI Computing

Presented by Maury Wood, VP Strategic Marketing, Vicor

Many market forces (including economic and competitive) in the edge computing and AI data center domains are driving densification, particularly as these data centers become larger and more capable. Gigawatt AI data centers are now under construction, with an estimated $375B being spent on this infrastructure in 2025. The goal of densification is twofold. The first initiative is to maximize the number of compute trays in each server. This is achieved largely by using direct liquid cooling to eliminate tall convection fan-forced heat sinks, and using low profile components to reduce tray height. These densification measures can eliminate expensive intra-rack optical transceivers among other cost savings. The second initiative is densification at the AI processor module level to free up PCB board space. AI processor modules (such as the OCP accelerator module OAM form factor) are relatively small, and thus the chiplet-based processors (CPUs and GPUs), local HBM memory, I/O SERDES lanes and power electronics all compete for limited PCB area. The packing of these components is limited by thermal constraints. The use of thermally-adept power modules can reduce the PCB area consumed by the point-of load power electronics and enable innovation. This presentation will focus on densification initiatives, with technical and commercial justification details explaining how to develop efficient, scalable, and cost-effective PNDs for edge and data center AI computing.

Collaborating to Advance Integrated Voltage Regulation for AI and Cloud Infrastructure

Presented by Noah Sturcken, CEO, Ferric

Awaiting presentation abstract.

Power Semiconductor Solutions for 800V Datacentre Architectures

Presented by Dr. Christian Felgemacher, Director Application Engineering, ROHM Semiconductor Europe

Today's server power supply architectures are based on AC/DC conversion within the IT racks and utilisation of 48V DC power distribution. With increasing power demands of AI servers these existing power supply architectures reach their limits. To overcome these limits the AC/DC conversion is moved to dedicated cabinets and DC distribution voltages are increased to 800V. Inside the IT racks DC/DC converters step down the 800V DC to the necessary operating voltages of the computing platforms. Of course, the highest possible levels of power conversion efficiency are required. ROHM’s modern wide band gap power semiconductor solutions can help realise the necessary power conversion units for these new architectures.

Powering AI Datacenters – from Grid to Core

Presented by Aleksei Cherkasov, Senior Manager Product Marketing, Infineon

Awaiting presentation abstract.

Presentation by Navitas

Presented by Llewellyn Vaughan-Edmunds, Senior Director, Product Management & Marketing, Navitas

Awaiting presentation abstract.

Presentation by Wired and Wireless Technologies (WAWT)

Presented by Dinesh Kithany, Founder & Chief Analyst, Wired & Wireless Technologies (WAWT)

Awaiting presentation abstract.

Presentation by Yole Group

Presented by Name to be advised, Yole Group

Awaiting presentation abstract.

Renesas GaN and Si System Solutions from Grid to core in AI-Datacenter

Presented by Pietro Scalia, Sr.Director Power System Marketing and Architecture, Renesas

Awaiting presentation abstract.

 
Engineering Innovation with WBG Devices, Circuits and Materials
Panel Session

SiC vs GaN: Settling the Wide-Bandgap Divide

For more than sixteen years the SiC–GaN argument has dominated wide-bandgap talks. Champions of each camp will confront one another with hard data on cost curves, voltage ceilings, packaging headaches and supply resilience.

(Ultra)widening the Gap: The applications carved by SiC and GaN, and how UWBG materials could disrupt this space.

Presented by Matthew Fall, Technology Analyst, IDTechEx

Increasing demands for efficiency, power density, and reliability have pushed the transition from Si IGBTs to SiC MOSFETs and GaN HEMTs in a wide range of industries including EVs, data centres, renewable energy, and aerospace. As SiC and GaN move from niche applications to the mainstream, investment is already flowing into materials that could succeed these wide bandgap semiconductors. Based on IDTechEx’s extensive research in the power electronics space, this talk unpacks the so-called fourth-generation, or ultra-wide bandgap semiconductors - gallium oxide, aluminium oxide, and diamond - and considers the unique challenges and opportunities facing these materials, comparing these to the barriers originally faced by SiC and GaN.

Breaking the 1MHz Barrier: System-Level Benefits of Ultra High Frequency GaN Motor Drives

Presented by James Cannings, Chairman, QPT

Motor drives have stagnated at 4-16 kHz switching frequencies for two decades. QPT has broken the 1 MHz barrier with GaN technology, delivering a 100x frequency leap that simultaneously delivers breakthroughs in efficiency, cost, and performance. By overcoming the fundamental thermal and EMI barriers that have confined the industry, we demonstrate how pure sine wave motor drives unlock system-level transformations: from eliminating screened cables and achieving servo performance from low-cost motors, to cutting emissions equivalent to half of global aviation. This talk reveals the complete IP portfolio that can enable commercial deployment across £60Bn+ industrial, robotics, automotive, and HVAC markets, and why this breakthrough redefines what's possible in motor control.

Harnessing GaN-SiC Synergy: Responsive Digital Control in the Navitas/GigaDevice Wide-Bandgap Power Stack

Presented by Llewellyn Vaughan-Edmunds, Senior Director, Product Management & Marketing, Navitas

Awaiting presentation abstract.

Presentation by Fox-Tech

Presented by Name to be advised, Fox-Tech

Awaiting presentation abstract.

Scaling to 1700-V SiC: Local Fabs and Emerging OEM Ecosystem

Presented by Manuel Gärtner, Director – Wide bandgap & Electrification, STMicroelectronics

Awaiting presentation abstract.

The value of GaN BDS in Next-Generation Power Electronics

Presented by Pietro Scalia, Sr.Director Power System Marketing and Architecture, Renesas

Awaiting presentation abstract.

 
Theme to be confirmed

Presentation by Advantest

Presented by Speaker TBC, Advantest

Awaiting presentation abstract.