Presentation at Power Electronics International 2025 are grouped into 6 key themes which collectively provide complete coverage of the global power electronics industry.
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Aluminum scandium nitride (AlScN) emerges as a promising material for power electronics due to its exceptional properties. Its wide bandgap, approaching that of AlN, suggests a high critical electric field strength. The combination of this wide bandgap with AlScN's elevated spontaneous polarization and enhanced piezoelectric properties facilitates devices capable of high current densities, high-frequency operation, and resilience to strong electric fields. These characteristics position AlScN as a prime candidate for high-electron-mobility transistors (HEMTs) and various power electronic applications, potentially enabling significant advancements in device performance and efficiency.
The rapid adoption of SiC and GaN technologies is reshaping the landscape of power electronics, driven by the need for higher efficiency, compact designs, and improved thermal performance across industries such as renewable energy, electric mobility, and industrial automation. However, the transformation comes with unique challenges in design validation, performance optimization, and ensuring reliability under extreme conditions. In this presentation, we explore the market forces propelling this shift and discuss how precision measurement solutions are enabling engineers to navigate these challenges. With state-of-the-art test and measurement tools, designers can accelerate innovation, ensuring the successful integration of SiC and GaN technologies into next-generation applications.
While GaN and SiC have already taking over market shares from Si power electronics, and there are also developments ongoing to advance their performance using advanced device structures such as superjunctions to increase their breakdown voltage, there are new ultrawide bandgap materials coming into the power electronics realm, in particular Gallium Oxide and AlGaN. I will review recent advances in device technologies using this new and upcoming materials e.g. the demonstration of 4kV Gallium Oxide devices, also early reliability investigations.
Automotive applications, particularly traction systems of electric vehicles, have emerged as the leading market for wide-bandgap semiconductors. Although silicon carbide (SiC) is the dominant technology due to its excellent physical properties and relatively mature status, it suffers from some limitations. Although substrate costs are coming down fast, they still represent a significant part of the total device costs and are a considerable quality factor. As DC losses are being reduced more and more, dynamic losses are becoming increasingly relevant also in slow switching inverter applications, especially under partial load conditions. Vertical GaN technology, based on foreign substrates, combines the potential to leverage superior material properties with low-cost substrates. Additionally, vertical device structures are essential for high-power modules.
This presentation introduces a novel Zero-Flux Residue technology for solder pastes used in formic acid reduction reflow ovens, addressing key challenges in power device soldering. Traditional methods, which rely on rosin-based flux solder pastes or solder preforms, often suffer from process inefficiencies, residue-related reliability concerns, and additional cleaning requirements. The newly developed flux technology maximizes formic acid’s reduction potential while incorporating heat-resistant agents that bond solder powders during preheating, ensuring superior meltability and wettability. Notably, all flux components fully evaporate at temperatures below typical lead-free solder reflow peak temperatures, leaving no residue. This innovation streamlines production, eliminates post-soldering cleaning processes, reduces overall manufacturing costs, and contributes to environmental sustainability.
With the increasing adoption of battery electric vehicle (BEV), there is an ever increasing focus on their driving range in order to reach an optimum cost-performance ratio. Traction inverter and motors consume over 30% of the overall electrical losses in a battery electric vehicle (BEV). Therefore, optimizing them is important. Due to their unipolar behavior, SiC Mosfets help in reducing power losses by over 50% typically compared to IGBTs. However, the high switching speeds of SiC can seldom be reaped due to system constraints, e.g., dv/dt slew rate limitation due to the motor winding insulation, leaving a significant potential untapped. This talk presents these system-dependent challenges limiting the full-utilization of SiC. An advanced inverter topology is presented which can help to overcome the classical trade-off between switching speed and dv/dt slew rate. This topology also offers soft switching, which helps to significantly reduce switching losses. As a result, an inverter system efficiency of over 99% is reached.
While in recent years the focus for power electronic systems was mostly efficiency meanwhile also sustainability aspects gain importance. There are various ways how modern semiconductors can contribute to this aspect. Beside the more efficient use of scarce resources also extended lifetime of systems in the field can be leveraged as a further dimension. Furthermore, efficient production procedures and technologies which lower CO2 footprints of related products are contributing to this goal as well. The presentation will give some inside how these aspects can be tackled by using wide band gap power semi technologies.
Power semiconductor technology is essential for efficient energy conversion in HVDC, renewable energy, EV, and traction systems. As power demands grow, advancements in IGBT, SiC, and bipolar devices enhance efficiency, reliability, and power density. Dynex Semiconductor Ltd, a leading innovator in power semiconductors for over 60 years, plays a crucial role in these applications. This presentation provides an overview of Dynex’s contributions, focusing on the evolution of power semiconductor devices and their impact on power grids. It explores IGBT, SiC, and bipolar technologies, demonstrating how Dynex’s advanced solutions continue to drive progress in energy conversion and transmission.
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Two decades ago, power semiconductors were hardly used in the primary grid on the high voltage side and the power grids were clearly structured with power sources, transforming many kinds of primary energy into electrical energy, distribution grids distributing the electrical energy to the various breakers and transformers and the to loads. There was a well-defined power flow from generation via distribution grids to the load. Today’s power grids is different: Loads are changing to active loads and feed the power grid with green and sustainable green energy from solar cells. Impossible without power semiconductors converting the DC from solar cells to AC. Furthermore, connecting offshore wind turbines far away from the coast with High Voltage DC-Transmission links to the power grid, again, impossible without power semiconductors. Let’s discover together these silent heroes.
A Figure of Merit (Ron x Qg) that is ten times better than traditional silicon enables gallium nitride (GaN) power devices to outperform silicon solutions in both AC-DC and DC-DC applications. High switching frequency can be employed without compromising efficiency. Therefore, smaller passive components can be used and heat sinks can be reduced or even removed, resulting in more compact systems with a smaller BOM which often delivers cost savings. This discussion will use practical AC-DC and DC-DC conversion examples to demonstrate the advantage Innoscience’s discrete InnoGaN™ and integrated SolidGaN™ GaN solutions which cover applications from 30V-700V. Consumer and industrial use cases will show how Innoscience’s GaN technology makes power system solutions more efficient, smaller and in many cases cheaper by reducing the BOM and/or assembly costs.
Digitalization and electrification are two transformative trends, each driving sustainability, efficiency, and cost reduction. Wise-Integration pioneers the convergence of these movements through digital GaN technology, bringing intelligence and optimization to power conversion. This presentation will showcase how Wise-Integration leverages digital control to unlock the full potential of GaN at high frequencies. Our innovative solutions not only enhance power density and system performance but also simplify implementation, reduce overall system cost, and streamline integration. By embedding intelligence into power electronics, we enable smarter, more compact, and highly efficient energy solutions for the future. The future is not just electric-it’s digitally enabled by Wise-Integration.
For high-power applications, the industry is moving to next generation semiconductor materials, so called Wide-bandgap materials (WBG) to replace Silicon (Si) such as Silicon Carbide (SiC) and Gallium Nitride (GaN). While these materials offer breakthrough properties, they are not a drop-in replacement and essentially require all new designs, materials, and processes to deal with higher temperatures and offer better thermal resistance, performance and reliability. Specifically, for back-end semiconductor packaging: 1. Silver Sintering (to replace and overcome thermal limitations of tin solders) 2. Epoxy Molding (to replace and overcome thermal limitations of silicone gel) 3. Trimming and Forming of Power leads and signal pins Boschman has pioneered Sintering & Epoxy Molding processes with early adopters in the industry and has positioned itself as the market leader for both Pressure Sintering and Advanced Transfer Molding. POWERTRIM technologies has pioneered Trim & Form and final assembly processes such as laser marking, laser welding, testing and AOI with early adopters in the industry and has positioned itself as the market leader for Power module Trim & Form / final assembly automation.
Power semiconductors are routinely divided by their material properties, ie electron band gap: Silicon and Wide Band Gap devices. However, to use them successfully, one need to look on physical operation in application and distinguish by mode of operation in application and by fundamental physical design, which reflects failure mode in real conditions. The lateral nature of GaN HEMT is radically different from vertical MOSFETs of SiC and Si, and design principles and operation of E-mode and D-mode devices are consequentially radically different. Successful high efficiency performance of GaN HEMT for hard switching high power and soft switching low power is shown in this paper and the underlying physical reasons of success and failure are explained.
The MD-P300 die attach bonder enables high-quality, high-productivity pre-bonding of SiC chips for power module production. In EV applications, SiC chips are pre-bonded to DBC substrates using Ag sintering materials, a process requiring high pressure, long bonding times, and high temperatures, leading to oxidation and lower productivity. To address these challenges, we integrated ultrasonic technology into the MD-P300 pre-bonding process. This approach successfully reduced temperature, pressure, and bonding time. In our presentation, we will detail the ultrasonic bonding mechanism and key parameters influencing the bonding characteristics of SiC/Ag sintering materials.
Power semiconductors have many positive growth factors behind them but one thing has become clear in recent years - the EV sector will be the central pillar around which the industry will be built. In 2021 xEV powertrains contributed 8.6% of all power discrete and module revenue. In 2023 this reached 21.9% and by 2028 it will near approach one-third (32.7%). Which device types will benefit? Will modules continue to be preferred over discretes? And how will OEM behaviour influence supply chains?
The "X-in-1" approach in Electric Vehicles (EVs) refers to the integration of multiple essential components of the vehicle into a single, unified system or module. Renesas has created a reference design together with an automotive Tier1 to showcase the system value and also provide a flexible development ecosystem which can be leveraged to easily modify and develop variants of the end equipment. 8 functions have been integrated in a single box (8-in-1), significantly reducing the total volume by about 30% and unit cost by sharing or reducing 1) ECU case, 2) water jacket, and 3) high-voltage wires. The system integrates an OBC, a DC/DC converter, and an EV Traction Inverter. The combination of a single MCU and a PMIC controls all functions, which reduces BOM cost by dollars, and contributes to compact ECU integration. Practical performance has been achieved in the reference design. >99% inverter, >95% OBC & DC/DC power efficiencies. For the OBC and DC/DC, the multi-phase Totem Pole PFC showcases SuperGaN switches to be able to increase switching frequency, reducing the size of the system, while reducing heating elements, thanks to the superior efficiency achieved. A similar approach with our SuperGaN can reduce the switching losses in the secondary DAB stage. Finally, magnetic integration with single core allows to reduce the HV Battery voltage to the auxiliary one. Renesas’ power portfolio provided all the isolated drivers for the isolated topologies, the bias function and system power needed to supply the MCU, which is intended for several control functions. All software is developed using MBD (MILS and HILS simulations, Autocoder), significantly reducing coding workload and bugs, and it can be scaled for further development using the same architecture.
The inverter test system is the right equipment to optimize the inverter’s control strategy. As the inverter influences the other components in the powertrain, an optimized control strategy leads to an increased total efficiency. Saving battery costs or extending the driving range is only one of many advantages resulting from a well-optimized inverter operating strategy. Moreover, it is always a question of the overall drivetrain efficiency and the single components’ interplay to offer a cost-optimized vehicle to the final customer.
SiC has been the rising star in vehicle electrification in the past years, meanwhile, the hybrid between SiC MOSFET and Si IGBT, benefiting from the cost and performance compromise, is also getting popular. In this presentation, we will discuss the latest trends and market forecasts of electrification, followed by a detailed review on SiC and Si hybrid approaches for EV inverters. For BEV inverters, the mix of SiC and Si can be implemented at various levels: a common practice is two motors driven individually by SiC and Si, as respectively primary and secondary motors; an innovative design is to have double inverters for one motor, each inverter with either SiC or Si; hybrid modules are recently gain attention to have both bare SiC and Si dies packaged in one module; an alternative solution is to have the mixture with discrete from SiC and Si. The flexibility of the hybrid approach can also be applied to PHEV and HEV powertrains.
ST's innovative Silicon Carbide technologies are at the forefront of the power electronics revolution, driving unparalleled efficiency in electric vehicles. This presentation will explore how ST is shaping the future of electric mobility, propelling the industry towards a more sustainable tomorrow.
With global climate change effects becoming increasingly apparent, decarbonization and power efficiency is driving forward the electrification. High power efficiency in electrical energy generation, conversion and storage is key, where power stages, inductors and capacitors are playing a key role. The last decade, the rise of wide bandgap power stages as alternative to traditional MOSFET and IGBT is indisputable – providing a higher power density and lower losses for similar operating conditions. Driving GaN and SiC power transistors creates challenges in all aspects of the design of new power trains. In this talk we will discuss the concrete challenges ahead, as well as potential solutions to reaching robust driving solution that will ultimately enable a greener world.
The continuous demand for higher reliability and performance in power electronics assembly necessitates innovative approaches to soldering processes. Traditional soldering methods often face challenges such as flux residue accumulation and the formation of voids during solidification, which can degrade the performance and lifespan of electronic components. This paper introduces a state-of-the-art vacuum soldering system equipped with groundbreaking features: a volatile capture cooling trap and a soft cooling chamber. These advancements are encapsulated in the modular and flexible design of Pink’s VADU vacuum soldering systems. Beside of the proven formic acid processing of the equipment, these systems feature intelligent temperature management and process capabilities that ensure void-free soldering, critical in high-reliability applications.
The use of power electronics converters is accelerating rapidly due to their high energy efficiency, crucial for decarbonization. Control technology and optimized components are essential. While complex techniques have been used, a significant leap is expected with Artificial Intelligence (AI). AI's nonlinear approach provides optimized, adaptive control methods that consider parameters like temperature, aging, and malfunctions. This progress is enabled by high-performance control chips and big data. Soft-switching power converters, being highly nonlinear, will greatly benefit from AI control techniques.
This presentation explores the development and implementation of AI-based control strategies for power electronics converters, focusing on reinforcement learning (RL) controllers for the 5-level Packed U-Cell (PUC5) grid-connected inverter. Traditional model-based controllers, such as Model Predictive Control (MPC) and Sliding Mode Control (SMC), achieve precise current regulation but are heavily dependent on system parameters. In contrast, reinforcement learning provides a model-free approach capable of handling nonlinearities and uncertainties. The proposed RL-based controller leverages a Proportional-Integral (PI) reward function, streamlining the training process by decoupling voltage balancing from the RL control objective. Instead, voltage balancing is managed via redundant switching states, significantly reducing the action space and training complexity. This study highlights the potential of RL as a robust and adaptive control solution for multilevel inverters, offering a promising alternative to conventional control methods.
AI is transforming power electronics, offering opportunities for enhanced design, efficiency, and performance. This talk explores the integration of AI into power electronics, focusing on challenges such as model interpretability, scalability, and real-time application constraints. Key trends include the automation of design processes for components like power converters and magnetic elements, leveraging machine learning for optimization and defect detection in PCBs, and employing AI-driven models for efficiency prediction and reliability enhancement. By addressing these challenges, AI enables the development of smarter, sustainable energy systems, fostering innovation in renewable energy applications and advanced power management solutions.
As power electronics advance into data-rich systems, artificial intelligence offers significant benefits for predictive maintenance applications. This talk will provide an overview of the latest developments in AI-assisted predictive maintenance for power electronics. As a synergistic field that integrates data science and power electronics, it will begin with a systematic introduction to AI-assisted predictive maintenance for power electronic systems. The industrial requirements and specific features of predictive maintenance in power electronics will be examined. The presentation will include case studies on digital twins and condition & health monitoring, featuring emerging AI tools such as data-light AI, computation-light AI, and physics-informed AI. Finally, the discussion will cover open-access resources and new opportunities in this field.
The potential energy demands of AI data centers has been a constant source of headlines. This presentation will go beyond those headlines to take a data driven look at how this will drive demand for power semiconductors. We will utilise data and insights from Omdia's dedicated data center team to build a market forecast. It is often thought that compound semiconductors have a great opportunity in this space, but how realistic is that? And what penetration rates will be required to drive real, sustainable, revenue growth?
Based on a general overview of AI, we analyse current AI implementations and solutions in the application field of power electronics. We show how efficient algorithms on GPU hardware can accurately solve transient circuit simulations in fractions of a second and how ferrite losses can be estimated quickly and accurately using a data-based neural network. We provide insights into so-called Physics-Informed Neural Networks (PINNs), which combine physics, maths and AI to predict all relevant parameters of a transformer without simulation and measurement data, just using the corresponding fundamental physical equations.
Traditional CPUs require typically only 300W and the data center ac/dc power supplies would typically power the equivalent of 10 of these or 3,000W (3kW). High-performance AI processors like NVIDIA’s ‘Grace Hopper’ H100 are already demanding 700W each today, with next-gen ‘Blackwell’ B100 & B200 chips anticipated to increase to 1,000W or more by next year. To meet this exponential power increase, Navitas AI power roadmap developed server power platforms which rapidly increase from 3kW to up to over 10kW, enabling up to 3x power increase to support similar exponential growth in AI power demands expected in just the next 12-18 months.
The rapid growth of artificial intelligence and machine learning applications has led to an exponential increase in computing power requirements, resulting in a significant rise in energy consumption and heat generation. Traditional power supply architectures are struggling to keep pace with these demands, leading to reduced efficiency, reliability, and overall system performance. This presentation explores the potential of Silicon Carbide (SiC)-based power solutions to revolutionize next-generation server power supplies, enabling unparalleled efficiency and reliability for AI-driven data centers.
The emerging wireless charging technology is gradually gaining awareness, popularity as well as adoption beyond consumer applications (smartphones, smartwatches, and wearables. With its proven success, confirmed benefits and availability of different type of wireless power solutions, medical, robotics, industrial and automotive applications are the latest to adopt wireless power. Amongst them, AGVs and AMRs, Industrial IoT sensors, as well as EVs and e-mobility applications are set to fast avail of the technology benefits.
