PRESENTATION

Disruptive Solutions in Power Electronics Enabled by WBG Devices

Modern power devices based on wide band gap materials like silicon carbide or gallium nitride become more and more an essential ingredient for modern and highly efficient power conversion systems. Due to the outstanding features of the new components also a leapfrog in system performance is enabled. The contribution will show based on selected examples of applications benefiting from SiC components how this helps to save our planet. Key benefits like loss and material saving as well as replacement of outdated electromechanical solutions are just a few examples.

Peter Friedrichs

Infineon

Dr. Peter Friedrichs received his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993 and his Ph.D work at the Fraunhofer Institut FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC. In 1996 he joined the Siemens AG and was involved in the development of power devices on SiC. Peter joined SiCED GmbH & Co. KG, a company being a joint venture of Siemens and Infineon, on March the 1st, 2000. Since July 2004 he was the managing director of SiCED. In 2009 he achieved the Dipl.-Wirt.-Ing. From the University of Hagen. After the integration of SiCED’s activities into Infineon he joined Infineon on April 1st, 2011 and acts currently as Vice President SiC.