PRESENTATION


Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure

Navitas is redefining data center power using wide-bandgap technologies such as GaN and SiC to support next-generation AI infrastructure. Traditional 54V systems face scalability, efficiency, and copper limitations, while 800V DC architecture enables multi-megawatt rack densities, reduces copper usage, and improves efficiency and reliability. Solid-state transformers and high-voltage SiC devices enable direct grid-to-800V conversion, simplifying power delivery. GaN technology further enhances power density, switching speed, and efficiency at the rack level.

Matteo Uccelli

Navitas


Matteo Uccelli is Field Application Engineer Manager at Navitas Semiconductor, where he drives adoption of GaN and SiC power IC technologies across high-performance applications. A graduate of Politecnico di Milano, Matteo’s career spans analog IC design and power conversion solutions for advanced energy systems.