PRESENTATION

High-Frequency GaN Power Conversion: Supercharging AI Data-Centre Density

AI-driven workloads are rapidly increasing rack power density, accelerating the in modular, centralized OCP, and emerging 800V HVDC architectures. This presentation highlights how high-frequency GaN power conversion enables greater efficiency, power density, and scalability from grid to GPU. Demonstrated platforms range from 4.5kW CRPS and 12kW OCP shelves (up to 97.8% efficiency) to a 10kW 800V–50V full-brick achieving over 98% efficiency at 1MHz. Integrated GaNFast™ IC technology, combining drive, power, and sensing, significantly reduces switching losses while improving size, power density, efficiency, and reliability for next-generation AI data centers.