To enhance the reliability of power electronics, deep EdgeAI is becoming an essential approach. One challenge is to scale AI massively to achieve a full distributed deployment, ideally into the power electronics itself. Therefore, a lightweight machine learning approach for estimating the Remaining Useful Life of IGBT and Silicon Carbide transistors is a useful contribution. By leveraging Radial Basis Function networks, we achieve state-of-the-art accuracy with a fraction of the computational cost. Our method is fully deployable on ultra-low memory DSPs, supporting on-chip learning and inference. This breakthrough would allow AI integrated in power transistors to move beyond simple switching, incorporating unprecedented, embedded intelligence and real-time diagnostic capabilities within a single package.
Danilo Pau is technical director in the STMicroelectronics EdgeAI organization in System research and applications. He is certified as full professor ASN09/E3 on Electrical and electronic engineering and measurements by the higher italian educational system. He was awarded on 2025 on IEEE Distinguished Industry Lecturer by IEEE Italy Section. Moreover, he is a Member of the Global Governance and AI Safety Committee of the National Academy of Artificial Intelligence (NAAI) as well as Members of the Scientific Committee for the term 2026-2027 IEEE SPS Italy Chapter. Danilo is chairing the Generative EdgeAI working group in EdgeAI Foundation, the largest EdgeAI community at worldwide level.