PRESENTATION

Silicon Carbide: The Game Changer in Power Electronics for Sustainable Electric Mobility

ST's innovative Silicon Carbide technologies are at the forefront of the power electronics revolution, driving unparalleled efficiency in electric vehicles. This presentation will explore how ST is shaping the future of electric mobility, propelling the industry towards a more sustainable tomorrow.

Simone Rascunà

ST Microelectronics

Simone Rascunà has been working in Research & Development at STMicroelectronics for High Power Devices since 2002. He has extensive experience in developing Silicon super-junction MOSFETs technologies and shifted his focus to compound semiconductors for High Power Applications in 2010. As an Advanced Research Senior Manager, he leads the design and development group for Silicon Carbide Diodes and has numerous patents in the field of SiC devices, including the fifth generation of the MDmesh super-junction technology.