PRESENTATION

Ultrawide Bandgap Semiconductors for Next Generation Power Electronics

While GaN and SiC have already taking over market shares from Si power electronics, and there are also developments ongoing to advance their performance using advanced device structures such as superjunctions to increase their breakdown voltage, there are new ultrawide bandgap materials coming into the power electronics realm, in particular Gallium Oxide and AlGaN. I will review recent advances in device technologies using this new and upcoming materials e.g. the demonstration of 4kV Gallium Oxide devices, also early reliability investigations.

Martin Kuball

University of Bristol

Professor Kuball is Royal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK; he is Director of the Centre for Device Thermography and Reliability (CDTR), Fellow or IEEE, IET, MRS, SPIE and IoP. He obtained his PhD from the Max-Planck Institute for Solid State Physics in Stuttgart, Germany and joined the University of Bristol after being Feodor Lynen Postdoctoral Fellow at Brown University, USA