PRESENTATION

Advancing SiC Substrate and Epitaxial Technologies for Next-Generation Power Devices

The global transition toward electrification and energy efficiency is driving unprecedented demand for high-performance power semiconductor devices. Electric vehicles (EVs), renewable energy systems, hyperscale data centers, and industrial motor drives require power electronics capable of operating at higher voltages, temperatures, and switching frequencies while minimizing energy losses and system footprint. Silicon carbide (SiC), a wide-bandgap semiconductor with superior material properties—such as a high critical electric field, a wide bandgap (3.26 eV), high thermal conductivity, and high saturation velocity—has emerged as a foundational technology for next-generation power devices. However, the performance, reliability, and cost-effectiveness of SiC power devices are fundamentally determined by the quality of the SiC substrate and epitaxial layers. Low basal plane dislocation (BPD) density, reduced micropipe density, tight resistivity control, and uniform thickness across large-diameter wafers (150 mm and transitioning to 200 mm) are critical enablers for high-yield device fabrication. Equally important, epitaxial layer control—including doping uniformity, defect suppression, carrier lifetime management, and precise thickness control—directly impacts breakdown voltage, on-resistance (R_DS(on)), switching losses, and long-term device reliability. This presentation focuses on the evolving substrate and epitaxial requirements for advanced SiC power devices driven by electric vehicles, data centers, and industrial applications. It will address the critical challenges associated with scaling to larger wafer diameters, strategies for reducing defect density, and advanced epitaxial engineering approaches necessary to meet the stringent performance, reliability, and cost targets of high-volume manufacturing. Continuous optimization of SiC substrate growth and epitaxy technologies at Coherent has enabled the production of low-defect, high-uniformity substrates and epitaxial wafers tailored for next-generation power devices. Recent progress in crystal quality, defect reduction, doping control, and wafer uniformity will be highlighted, along with the latest quality performance trends demonstrating readiness for large-scale deployment.