PRESENTATION

(Ultra)widening the Gap: The applications carved by SiC and GaN, and how UWBG materials could disrupt this space.

Increasing demands for efficiency, power density, and reliability have pushed the transition from Si IGBTs to SiC MOSFETs and GaN HEMTs in a wide range of industries including EVs, data centres, renewable energy, and aerospace. As SiC and GaN move from niche applications to the mainstream, investment is already flowing into materials that could succeed these wide bandgap semiconductors. Based on IDTechEx’s extensive research in the power electronics space, this talk unpacks the so-called fourth-generation, or ultra-wide bandgap semiconductors - gallium oxide, aluminium oxide, and diamond - and considers the unique challenges and opportunities facing these materials, comparing these to the barriers originally faced by SiC and GaN.