Matteo Uccelli
FAE Manager EMEA
Navitas
Matteo Uccelli is Field Application Engineer Manager at Navitas Semiconductor, where he drives adoption of GaN and SiC power IC technologies across high-performance applications. A graduate of Politecnico di Milano, Matteo’s career spans analog IC design and power conversion solutions for advanced energy systems.
Presentations
High-Frequency GaN Power Conversion: Supercharging AI Data-Centre Density
AI-driven workloads are rapidly increasing rack power density, accelerating the in modular, centralized OCP, and emerging 800V HVDC architectures. This presentation highlights how high-frequency GaN power conversion enables greater efficiency, power density, and scalability from grid to GPU. Demonstrated platforms range from 4.5kW CRPS and 12kW OCP shelves (up to 97.8% efficiency) to a 10kW 800V–50V full-brick achieving over 98% efficiency at 1MHz. Integrated GaNFast™ IC technology, combining drive, power, and sensing, significantly reduces switching losses while improving size, power density, efficiency, and reliability for next-generation AI data centers.
Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure
Navitas is redefining data center power using wide-bandgap technologies such as GaN and SiC to support next-generation AI infrastructure. Traditional 54V systems face scalability, efficiency, and copper limitations, while 800V DC architecture enables multi-megawatt rack densities, reduces copper usage, and improves efficiency and reliability. Solid-state transformers and high-voltage SiC devices enable direct grid-to-800V conversion, simplifying power delivery. GaN technology further enhances power density, switching speed, and efficiency at the rack level.