Ivan Llaurado
Chief Revenue Officer (CRO) & Partnership Development Director
DIAMFAB
Ivan Llaurado is a technology entrepreneur focused on advanced semiconductor materials. He is Chief Revenue Officer of DIAMFAB, a spin-off from the French CNRS, building an industrial platform for semiconductor diamond electronics. His work bridges deep-tech research, product strategy, and market development for high-performance devices targeting extreme environments, power electronics, space systems, and radiation-hard applications.
Ivan Llaurado leads partnerships with industrial players, research institutes, and global investors to scale diamond semiconductor manufacturing. He contributes to roadmap definition across wafer engineering, device integration, and strategic applications, with a focus on bringing diamond technologies from strategic markets to large-scale industrial adoption.
Prior to DIAMFAB, he held roles in business operations, business strategy, technology commercialization and management in Schneider Electric. He holds engineering and management degrees and works at the interface of scientific innovation and market deployment.
Presentations
Diamond Power Electronics: Beyond Ultra-high Voltage
Wide bandgap (WBG) semiconductors such as SiC and GaN have transformed power electronics by enabling higher switching frequencies, higher breakdown voltages, and improved efficiency compared to silicon based components. As applications push toward extreme power density, elevated temperature, and multi-kV operation, the adoption of a new generation of semiconductors is no longer optional, it is emerging as a key enabler to meet efficiency, reliability, and thermal-management requirements at scale. Diamond, with its ultra-wide bandgap (5.47 eV), exceptional breakdown field (>10 MV/cm), highest known thermal conductivity (>2000 W/m·K), and high carrier mobility, represents the ultimate semiconductor. This presentation reviews the current state of the art in diamond power devices (Schottky diodes, JFETs, MOSFET architectures), and the key technological challenges review such as controlled doping, ohmic contacts, wafer size, defect density, etc. Finally, we will share the vision on the roadmap that will enable diamond to become a compelling alternative to Si, SiC and GaN and outline the roadmap required to transition from laboratory demonstrations to scalable industrial solutions.