Ali Yassine is a young scholar specializing in compound semiconductors for power electronic applications. He graduated with a bachelor’s degree in physics in 2018 and a master’s degree in applied physics in 2021 at the University of Freiburg. Currently, Ali is pursuing his PhD at the department of power electronics of the institute of sustainable systems engineering (INATECH) at the University of Freiburg and is conducting research in the topic area "Aluminum Scandium Nitride/Gallium Nitride based power transistors".
Aluminum scandium nitride (AlScN) emerges as a promising material for power electronics due to its exceptional properties. Its wide bandgap, approaching that of AlN, suggests a high critical electric field strength. The combination of this wide bandgap with AlScN's elevated spontaneous polarization and enhanced piezoelectric properties facilitates devices capable of high current densities, high-frequency operation, and resilience to strong electric fields. These characteristics position AlScN as a prime candidate for high-electron-mobility transistors (HEMTs) and various power electronic applications, potentially enabling significant advancements in device performance and efficiency.