Louis THURIES is the product manager at SCREEN LASSE. Before that, he was based in Taiwan as an application, process, and product development engineer. He extensively worked with R&D centers (LETI/imec/IBM) for application development, focusing on advanced logic, CIS, power, and memory devices. Before LASSE, he was working on GaN HEMT development in Grenoble.
Within the last decades, UV-laser annealing (UV-LA) has emerged as an essential technology for power device manufacturing. Thanks to its ultra-short timescale and shallow light penetration, UV-LA permits selective and localized anneal at high temperatures. Due these advantages, UV-LA opens new integration paths for power devices manufacturers like formation of backside junctions for Silicon IGBT. Recently, owing to its high productivity and selective annealing capability, UV-LA from SCREEN has been widely adopted by major SiC device manufacturers and has become the process of reference for backside ohmic contact formation applied on SiC devices. Moreover, it is believed that UV-LA technology will also become essential to face next-generation challenges of SiC devices like activation of high-doped SiC junctions or frontside p-type contact formation.