Denis Marcon
General Manager
Innoscience Europe BV
Denis Marcon received a M.S. degree from the University of Padova in 2006. In 2011, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and Imec with a thesis entitled “Reliability study of power gallium nitride based transistors”. Denis is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, Denis has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he joined the business development team of Imec where he was directly responsible for the partnerships with Imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems.
Denis is General Manager of Innoscience Europe (a subsidiary of Innoscience), and he is directly responsible for the Innoscience’s GaN business and marketing in Europe.
Presentations
Price-competitive GaN Power Devices make Power Systems Eco-friendly by Reducing Energy Waste while Shrinking their Size
A Figure of Merit (Ron x Qg) that is ten times better than traditional silicon enables gallium nitride (GaN) power devices to outperform silicon solutions in both AC-DC and DC-DC applications. High switching frequency can be employed without compromising efficiency. Therefore, smaller passive components can be used and heat sinks can be reduced or even removed, resulting in more compact systems with a smaller BOM which often delivers cost savings. This discussion will use practical AC-DC and DC-DC conversion examples to demonstrate the advantage Innoscience’s discrete InnoGaN™ and integrated SolidGaN™ GaN solutions which cover applications from 30V-700V. Consumer and industrial use cases will show how Innoscience’s GaN technology makes power system solutions more efficient, smaller and in many cases cheaper by reducing the BOM and/or assembly costs.