Dr. Bernd Dielacher is business development manager at EV Group (EVG) where he evaluates global market trends and develops growth opportunities for EVG's bonding, lithography and nanoimprint businesses with a particular focus on the MEMS, biomedical technology and power device market.
Bernd holds a master’s degree in Microelectronics from Vienna University of Technology and received a PhD in Biomedical Engineering from ETH Zurich.
Silicon Carbide (SiC) is considered as one of the most promising materials for next-generation high-voltage power devices. Its superior material properties, compared to conventional silicon (Si) enable more efficient and lower-loss energy conversion. As a result, SiC can significantly reduce overall power consumption. Today, the demand for SiC power devices is strongly driven by the growth in electric vehicles, and the industry needs to ramp up production and address current manufacturing challenging. For example, to reduce the high cost of SiC substrates, wafer bonding is an interesting technology to produce cost-effective engineered substrates. In particular, a room temperature wafer bonding process is presented that enables conductive, oxide-free bond-interfaces well suited for advanced vertical power device architectures.