Peter Friedrichs
Vice President SiC
Infineon
Dr. Peter Friedrichs received his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993 and his Ph.D work at the Fraunhofer Institut FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC. In 1996 he joined the Siemens AG and was involved in the development of power devices on SiC.
Peter joined SiCED GmbH & Co. KG, a company being a joint venture of Siemens and Infineon, on March the 1st, 2000. Since July 2004 he was the managing director of SiCED. In 2009 he achieved the Dipl.-Wirt.-Ing. From the University of Hagen. After the integration of SiCED’s activities into Infineon he joined Infineon on April 1st, 2011 and acts currently as Vice President SiC.
Presentations
Contribution of Wide Band Gap Semiconductors to a More Sustainable Energy Landscape
While in recent years the focus for power electronic systems was mostly efficiency meanwhile also sustainability aspects gain importance. There are various ways how modern semiconductors can contribute to this aspect. Beside the more efficient use of scarce resources also extended lifetime of systems in the field can be leveraged as a further dimension. Furthermore, efficient production procedures and technologies which lower CO2 footprints of related products are contributing to this goal as well. The presentation will give some inside how these aspects can be tackled by using wide band gap power semi technologies.