Philip leads Transphorm’s global marketing and business development efforts for the company’s GaN power semiconductor technology. Previously, he oversaw business development for Vishay Siliconix’s superjunction technology and Microsemi’s MOSFETs, FRED diodes, IGBTs, and SiC technologies. He also held marketing and engineering roles at Medallion Instrumentation Systems and Fairchild Semiconductor. He earned an MBA (Hons) from I.H. Asper School of Business, University of Manitoba; a BSc in Electrical Engineering, University of Manitoba; and an associate degree in Electronic Engineering Technology, Red River College. He also holds two US patents and a trade secret, and has authored many technical and application papers.
SiC’s viability as a broad-spectrum WBG power conversion solution has recently been questioned. e-mode GaN solutions are proven, but primarily in lower power applications. Enter normally-off d-mode GaN. Designed into adapters, datacenter PSUs, solar microinverters, and UPSs—d-mode GaN demonstrates the performance, reliability, and versatility needed to cross the power spectrum. This GaN technology delivers future-proofed innovation that has led to technological achievements such as 5 microsecond short circuit withstand times and 1200 V GaN—the platform drawing the automotive market’s attention. Learn more about why normally-off d-mode GaN is the future of power electronics.